Publications in year 2017

Long-range spin-coherence in a strongly-coupled all electronic dot-cavity system
M. S. Ferguson, D. Oehri, C. Rössler, T. Ihn, K. Ensslin, G. Blatter, and O. Zilberberg
Phys. Rev. B 96, 235431 (2017) / arXiv:1705.11145
Anomalous Coulomb drag between bilayer graphene and a GaAs electron gas
P. Simonet, S. Hennel, H. Overweg, R. Steinacher, M. Eich, R. Pisoni, Y. Lee, P. Märki, T. Ihn, and K. Ensslin
N. J. Phys. 19, 103042 (2017)
Anisotropy and Suppression of Spin-Orbit Interaction in a GaAs Double Quantum Dot
A. Hofmann, V. F. Maisi, T. Krähenmann, C. Reichl, W. Wegscheider, K. Ensslin, and T. Ihn
Phys. Rev. Lett. 119, 176807 (2017) / arXiv:1612.06199
Temperature-stabilized differential amplifier for low-noise DC measurements
P. Märki, B. A. Braem, and T. Ihn
Review of Scientific Instruments 88, 085106 (2017)
Passivation of Edge States in Etched InAs Sidewalls
C. Mittag, M. Karalic, S. Mueller, T. Tschirky, W. Wegscheider, O. Nazarenko, M. V. Kovalenko, T. Ihn, and K. Ensslin
Appl. Phys. Lett. 111, 082101 (2017) / arXiv:1706.01704
Gate-defined one-dimensional channel and broken symmetry states in MoS2 van de Waals heterostructures
R. Pisoni, Y. Lee, H. Overweg, M. Eich, P. Simonet, K. Watanabe, T. Taniguchi, R. Gorbachev, T. Ihn, and K. Ensslin
Nano Lett. 17, 5008 (2017),  / arXiv:1701.08619
Edge transport in InAs and InAs/GaSb quantum wells
S. Mueller, C. Mittag, T. Tschirky, C. Charpentier, W. Wegscheider, K. Ensslin, and T. Ihn
Phys. Rev. B 96, 075406 (2017) / arXiv: 1706.00320
Oscillating magnetoresistance in graphene p-n junctions at intermediate magnetic fields
H. Overweg, H. Eggimann, M.-H. Liu, A. Varlet, M. Eich, P. Simonet, Y. Lee, K. Watanabe, T. Taniguchi, K. Richter, V. I. Falko, K. Ensslin, and T. Ihn
Nano Lett. 17, 2852 (2017) / arXiv:1612.07624
Lateral p-n Junction in an Inverted InAs/GaSb Double Quantum Well
M. Karalic, C. Mittag, T. Tschirky, W. Wegscheider, K. Ensslin, T. Ihn
Phys. Rev. Lett. 118, 206801 (2017) / arXiv: 1703.08317
Strong Coupling Cavity QED with Gate-Defined Double Quantum Dots Enabled by a High Impedance Resonator
A. Stockklauser, P. Scarlino, J. Koski, S. Gasparinetti, C. Kraglund Andersen, C. Reichl, W. Wegscheider, T. Ihn, K. Ensslin, and A. Wallraff
Phys. Rev. X 7, 011030 (2017) / arXiv:1701.03433
Impact of strain on the electronic properties of InAs/GaSb quantum well systems”
L. Tiemann, S. Mueller, Q.-S. Wu, T. Tschirky, K. Ensslin, W. Wegscheider, M. Troyer, A. A. Soluyanov, and T. Ihn
Phys. Rev. B 95, 115108 (2017) / arXiv:1610.06776
Scattering mechanisms of highest-mobility InAs/AlGaSb quantum wells
T. Tschirky, S. Mueller, Ch. A. Lehner, S. Fält, T. Ihn, K. Ensslin, W. Wegscheider
Phys. Rev. B 95, 115304 (2017) / arXiv:1612.06782
Fermi edge singularities in transport through lateral GaAs quantum dots
T. Krähenmann, L. Ciorciaro, C. Reichl, W. Wegscheider, L. Glazman, T. Ihn and K. Ensslin
N. J. Phys. 19, 023009 (2017) / arXiv:1702.00935

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