Publications in year 2018

Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures
M. Hamer, E. Tov́aŕi, M. Zhu, M. D. Thompson, A. Mayorov, J. Prance, Y. Lee, R. P. Haley, Z. R. Kudrynskyi, A. Patane,D. Terry, Z. D. Kovalyuk, K. Ensslin, A. V. Kretinin, A. Geim, and R. Gorbachev
Nano Lett. 18, 3950 (2018),  / arXiv:1805.05896
 
Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure
Y. Lee,R. Pisoni,H. Overweg,M. Eich,P. Rickhaus,A. Patan,Z. R. Kudrynskyi,Z. D. Kovalyuk,R. Gorbachev,K. Watanabe,T. Taniguchi,T. Ihn,and K. Ensslin
2D Mater. 5, 035040 (2018) / arXiv:1805.10946
 
Cavity-mediated coherent coupling between distant quantum dots
G. Nicol, M. S. Ferguson, C. Rssler, A. Wolfertz, G. Blatter, T. Ihn, K. Ensslin, C. Reichl, W. Wegscheider, and O. Zilberberg
Phys. Rev. Lett.120, 236801 (2018) / arXiv:1712.08569
 
Joule-heating induced thermal voltages in graphene three-terminal nanojunctions
P. Butti, R. Brnnimann, K. Ensslin, and I. Shorubalko
Appl. Phys. Lett. 112, 133501 (2018)
 
Electrostatically induced quantum point contact in bilayer graphene
H. Overweg,H. Eggimann,X. Chen,S. Slizovskiy,M. Eich,R. Pisoni,Y. Lee,P. Rickhaus,K. Watanabe,T. Taniguchi,V. Falko,T. Ihn,and K. Ensslin
Nano Letters 18,553 (2018) / arXiv:1707.09282
 
Edge channel confinement in a bilayer graphenen-p-nquantum dot
H. Overweg,P. Rickhaus,M. Eich,Y. Lee,R. Pisoni,K. Watanabe,T. Taniguchi,T. Ihn,and K. Ensslin
New J. Phys. 20, 013013 (2018) / arXiv:1709.00870
 
Gate-Tunable Quantum Dot in a High Quality Single Layer MoS2Van der Waals Heterostructure
R. Pisoni,Z. Lei,P. Back,M. Eich,H. Overweg,Y. Lee,K. Watanabe,T. Taniguchi,T. Ihn,and K. Ensslin
Appl. Phys. Lett. 112, 123101 (2018) / arXiv:1801.00452
 

Other years:  1996  1997  1998  1999  2000  2001  2002  2003  2004  2005 
 2006  2007  2008  2009  2010  2011  2012  2013  2014 
 2015  2016  2017  2018